all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! data sheet 1 of 8 rev. 03.3, 2016-06-15 PXAC261002FC thermally-enhanced high power rf ldmos fet 100 w, 28 v, 2490 ? 2690 mhz description the PXAC261002FC is a 100-watt ldmos fet with an asymmetric design intended for use in multi-standard cellular power ampli? er applications in the 2496 to 2690 mhz frequency band. features include dual-path design, high gain and a thermally-enhanced pack- age with earless ? anges. manufactured with in? neon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. PXAC261002FC package h-37248-4 rf characteristics two-carrier wcdma speci? cations (tested in in? neon production doherty test ? xture) v dd = 26 v, i dq = 210 ma, p out = 18 w avg, v gs2 = 1.4 v, ? 1 = 2550 mhz, ? 2 = 2590 mhz, 3gpp signal, 3.84 mhz channel bandwidth, 8 db peak/average @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 14.1 15.1 ? db drain ef? ciency d 46 49 ? % intermodulation distortion imd ? ?22 ?21 dbc output par at 0.01% probability on ccdf opar 7.5 ? ? db (one-carrier wcdma, 2585 mhz, 10 db par) features ? broadband internal input and output matching ? asymmetric design - main: p1db = 40 w typ - peak: p1db = 70 w typ ? typical pulsed cw performance, 2590 mhz, 26 v, 160 s, 10% duty cycle, doherty con? guration - output power at p 1db = 46.5 dbm - output power at p 3db = 50.1 dbm ? capable of handling 10:1 vswr @28 v, 100 w (cw) output power ? integrated esd protection : human body model, class 1c (per jesd22-a114) ? low thermal resistance ? pb-free and rohs compliant 0 10 20 30 40 50 60 11 12 13 14 15 16 17 29 33 37 41 45 49 drain efficiency (%) gain (db) output power (dbm) two-carrier wcdma drive-up v dd = 26 v, i dq = 210 ma, v gs1 = 2.62 v, ? = 2590 mhz, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing, bw 3.84 mhz, doherty fixture gain efficiency c261002fc_g1
PXAC261002FC data sheet 2 of 8 rev. 03.3, 2016-06-15 dc characteristics (each side) characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v( br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1 a v ds = 63 v, v gs = 0 v i dss ? ? 10 a gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1 a on-state resistance (main) v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.3 ? (peak) v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.16 ? operating gate voltage (main) v ds = 26 v, i dq = 210 ma v gs 2.1 2.6 3.1 v (peak) v ds = 26 v, i dq = 0 ma v gs 0.9 1.4 1.9 v maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?6 to +10 v operating voltage v dd 0 to +32 v junction temperature t j 225 c storage temperature range t stg ?65 to +150 c thermal resistance (doherty, t case = 70c, 100 w cw) r jc 0.6 c/w ordering information type and version order code package and description shipping PXAC261002FC v1 r0 PXAC261002FCv1r0xtma1 h-37248-4, open-cavity, tape & reel, 50 pcs push-pull, earless ? ange PXAC261002FC v1 r250 PXAC261002FC v1r250xtma1 h-37248-4, earless ? ange tape & reel, 250 pcs push-pull, earless ? ange
PXAC261002FC data sheet 3 of 8 rev. 03.3, 2016-06-15 typical performance (data taken in a production doherty test ? xture) 10 20 30 40 50 60 -60 -50 -40 -30 -20 -10 29 33 37 41 45 49 drain efficiency (%) imd & acpr (dbc) output power (dbm) two-carrier wcdma drive-up v dd = 26 v, i dq = 210 ma, v gs1 = 2.62 v, ? = 2590 mhz, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing, bw 3.84 mhz imd low imd up acpr efficiency c261002fc_g2 10 20 30 40 50 60 70 10.5 11.5 12.5 13.5 14.5 15.5 16.5 29 33 37 41 45 49 53 efficiency (%) gain (db) output power (dbm) power sweep, cw v dd = 26 v, i dq = 210 ma, v gs1 = 2.62 v efficiency gain 2550 mhz 2585 mhz 2590 mhz c261002fc_g4 10 20 30 40 50 60 70 10.5 11.5 12.5 13.5 14.5 15.5 16.5 29 33 37 41 45 49 53 efficiency (%) gain (db) output power (dbm) cw performance at various v dd i dq = 210 ma, ? = 2590 mhz v dd = 24 v v dd = 28 v v dd = 32 v gain efficiency c261002fc_g5 -42 -38 -34 -30 -26 -22 -18 29 34 39 44 49 imd (dbc) output power (dbm) two-carrier wcdma drive-up v dd = 26 v, i dq = 210 ma, v gs1 = 2.62 v, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing, bw 3.84 mhz 2550mhz imdl 2550mhz imdu 2585mhz imdl 2585mhz imdu 2590mhz imdl 2590mhz imdu c261002fc_g3
PXAC261002FC data sheet 4 of 8 rev. 03.3, 2016-06-15 typical performance (cont.) load pull performance main side load pull performance ? pulsed cw signal: 160 s, 10% duty cycle, v dd = 28 v, i dq = 240 ma p 1db max output power max pae freq [mhz] z s [ ] zl [] gain [db] p out [dbm] p out [w] pae [%] zl [] gain [db] p out [dbm] p out [w] pae [%] 2540 13.3 ? j23.8 5.7 ? j10.9 16.8 46.58 45 50.3 10.9 ? j7.1 19.1 45.1 32 59.5 2590 16.5 ? j22.0 5.9 ? j11.5 16.7 46.44 44 50.3 9.7 ? j7.6 18.7 45.3 34 58.5 2640 21 ? j24.7 6.4 ? j11.5 16.8 46.35 43 50.0 10 ? j6.2 19.1 44.9 31 58.0 peak side load pull performance ? pulsed cw signal: 160 s, 10% duty cycle, 28 v, v gs1 = 1.4 v p 1db max output power max pae freq [mhz] z s [ ] zl [] gain [db] p out [dbm] p out [w] pae [%] zl [] gain [db] p out [dbm] p out [w] pae [%] 2540 3.8-j12.1 11.8-j7.3 13.0 50 100 53.5 5.2-j5.3 14.4 48.4 69 63.4 2590 5.2-j12.8 13-j5.4 12.8 50 100 53.4 5.7-j5.6 14.2 48.5 71 62.2 2640 5.8-j13.3 14-j3.9 12.8 49.9 98 52.9 6.6-j6 14.2 48.4 69 61.0 -20 -15 -10 -5 0 13 14 15 16 17 2500 2550 2600 2650 2700 2750 input return loss (db) gain (db) frequency (mhz) small signal cw performance gain & input return loss v dd = 28 v, i dq = 210 ma irl gain c261002fc_g6
PXAC261002FC data sheet 5 of 8 rev. 03.3, 2016-06-15 reference circuit, 2545 ? 2595 mhz reference circuit assembly diagram (not to scale) PXAC261002FC_in_02_d c102 rf_in rf_out v dd v gspk PXAC261002FC_cd_01-28-2014 c101 c103 c104 c106 c107 r102 r101 r103 c205 c206 c208 c207 c202 c201 c203 ro4350, .020 (194) c210 c211 PXAC261002FC_out ro4350, .020 (60) c105 02_d c212 c213 c204 c209 s1 v dd v gs
PXAC261002FC data sheet 6 of 8 rev. 03.3, 2016-06-15 reference circuit (cont.) pinout diagram (top view) lead connections for PXAC261002FC pin description d1 drain device 1 (main) d2 drain device 2 (peak) g1 gate device 1 (main) g2 gate device 2 (peak) s source (? ange) reference circuit assembly dut PXAC261002FC v1 test fixture part no. lta/PXAC261002FC v1 pcb rogers 4350, 0.508 mm [0.020?] thick, 2 oz. copper, ? r = 3.66, ? = 2545 ? 2595 mhz find gerber ? les for this test ? xture on the in? neon web site at http://www.infineon.com/rfpower components information component description suggested manufacturer p/n input c101, c106 capacitor, 10 f taiyo yuden umk325c7106mm-t c102 capacitor, 18 pf atc atc800a180jt250t c103 capacitor, 1.6 pf atc atc800a1r6ct250t c104 capacitor, 0.6 pf atc atc800a0r6ct250t c105, c107 capacitor, 12 pf atc atc800a120jt250t r101, r103 resistor, 10 ohm panasonic electronic components erj-3geyj100v r102 resistor, 50 ohm anaren c16a50z4 s1 hybrid coupler anaren x3c26p1-03s output c201, c202 capacitor, 12 pf atc atc800a120kt250t c203, c205, c208, c210 capacitor, 10 f taiyo yuden umk325c7106mm-t c204, c209 capacitor, 220 f panasonic electronic components eee-fp1v221a c206 capacitor, 0.5 pf atc atc800a0r5ct250t c207 capacitor, 0.6 pf atc atc800a0r6ct250t c211 capacitor, 12 pf atc atc800a120jt250t c212 capacitor, 0.4 pf atc atc800a0r4ct250t c213 capacitor, 3.9 pf atc atc800a3r9ct250t h-37248-4_pd_10-10-2012 s d1 d2 g1 g2 main peak
PXAC261002FC data sheet 7 of 8 rev. 03.3, 2016-06-15 package outline speci? cations package h-37248-4 find the latest and most complete information about products and packaging at the in? neon internet page http://www.infineon.com/rfpower diagram notesunless otherwise speci?ed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless speci?ed otherwise. 4. pins: d1, d2 C drains; g1, g2 C gates; s C source. 5. lead thickness: 0.10 + 0.076/C0.025 mm [0.004+0.003/C0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. & / / & & / ; > @ ? > ? @ ; > @ / , ' > @ ) / $ 1 * ( > @ ; ? > ? @ ? > ? @ 6 3 + > @ ; 5 > 5 @ ' ' * * > @ > @ 6 ; ? ; > ? ; @ > @ > @ ? > ? @ + b s r b b > @ $
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